Infineon FP40R12KE3GBOSA1, Type N-Channel IGBT Module, 55 A 1.2 kV, 35-Pin ECONO3, Through Hole
- RS Stock No.:
- 124-8788
- Mfr. Part No.:
- FP40R12KE3GBOSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 box of 10 units)*
MYR7,269.44
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 08 May 2028
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Box* |
|---|---|---|
| 10 - 10 | MYR726.944 | MYR7,269.44 |
| 20 - 30 | MYR710.951 | MYR7,109.51 |
| 40 + | MYR697.867 | MYR6,978.67 |
*price indicative
- RS Stock No.:
- 124-8788
- Mfr. Part No.:
- FP40R12KE3GBOSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 55A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 210W | |
| Package Type | ECONO3 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 35 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | FP40R12KE3G | |
| Standards/Approvals | No | |
| Length | 122mm | |
| Height | 17mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 55A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 210W | ||
Package Type ECONO3 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 35 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series FP40R12KE3G | ||
Standards/Approvals No | ||
Length 122mm | ||
Height 17mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.