Infineon 1EDN7511BXUSA1 MOSFET Gate Driver 1, 8 A 6-Pin 20 V, SOT-23
- RS Stock No.:
- 222-4763
- Mfr. Part No.:
- 1EDN7511BXUSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 15 units)*
MYR26.61
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- 8,085 left, ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 15 - 15 | MYR1.774 | MYR26.61 |
| 30 - 75 | MYR1.627 | MYR24.41 |
| 90 - 225 | MYR1.501 | MYR22.52 |
| 240 - 465 | MYR1.393 | MYR20.90 |
| 480 + | MYR1.354 | MYR20.31 |
*price indicative
- RS Stock No.:
- 222-4763
- Mfr. Part No.:
- 1EDN7511BXUSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Output Current | 8A | |
| Pin Count | 6 | |
| Package Type | SOT-23 | |
| Fall Time | 4.5ns | |
| Driver Type | MOSFET | |
| Number of Outputs | 5 | |
| Rise Time | 6.5ns | |
| Minimum Supply Voltage | 4.2V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.45mm | |
| Series | 1EDN7511B | |
| Length | 2.9mm | |
| Width | 1.6 mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Output Current 8A | ||
Pin Count 6 | ||
Package Type SOT-23 | ||
Fall Time 4.5ns | ||
Driver Type MOSFET | ||
Number of Outputs 5 | ||
Rise Time 6.5ns | ||
Minimum Supply Voltage 4.2V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.45mm | ||
Series 1EDN7511B | ||
Length 2.9mm | ||
Width 1.6 mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness.
-10V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers
5A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages
Cool driver ICs thanks to true rail-to-rail low impedance output stages
4V and 8V UVLO (Under Voltage Lock Out) options for instant MOSFET protection during start-up and under abnormal conditions
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