onsemi MOSFET Gate Driver 1, 6 A 24-Pin 22 V, QFN
- RS Stock No.:
- 178-4261
- Mfr. Part No.:
- NCP51705MNTXG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR36,996.00
FREE delivery for orders over RM 500.00
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR12.332 | MYR36,996.00 |
| 6000 - 9000 | MYR12.061 | MYR36,183.00 |
| 12000 + | MYR11.839 | MYR35,517.00 |
*price indicative
- RS Stock No.:
- 178-4261
- Mfr. Part No.:
- NCP51705MNTXG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Output Current | 6A | |
| Pin Count | 24 | |
| Package Type | QFN | |
| Fall Time | 15ns | |
| Number of Outputs | 5 | |
| Driver Type | MOSFET | |
| Rise Time | 15ns | |
| Minimum Supply Voltage | 22V | |
| Maximum Supply Voltage | 22V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Width | 4 mm | |
| Series | NCP51705 | |
| Length | 4mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Output Current 6A | ||
Pin Count 24 | ||
Package Type QFN | ||
Fall Time 15ns | ||
Number of Outputs 5 | ||
Driver Type MOSFET | ||
Rise Time 15ns | ||
Minimum Supply Voltage 22V | ||
Maximum Supply Voltage 22V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Width 4 mm | ||
Series NCP51705 | ||
Length 4mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.
Allow independent Turn-ON/Turn-OFF Adjustment
Efficient SiC MOSFET Operation during the Conduction Period
Fast Turn-off and Robust dV/dt Immunity
Minimize complexity of bias supply in isolated gate drive applications
Sufficient VGS amplitude to match SiC best performance
Self protection of the design