Infineon 8 MB SPI FRAM 8-Pin SOIC, CY15B108QN-40SXI
- RS Stock No.:
- 273-5267
- Mfr. Part No.:
- CY15B108QN-40SXI
- Manufacturer:
- Infineon
Subtotal (94 units, in tubes of 94)*
MYR18,437.72
FREE delivery for orders over RM 150.00
Temporarily out of stock
- Shipping from 02 April 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 94 + | MYR196.146 | MYR18,437.72 |
*price indicative
- RS Stock No.:
- 273-5267
- Mfr. Part No.:
- CY15B108QN-40SXI
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 8MB | |
| Product Type | FRAM | |
| Organisation | 1M x 8 | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 0ns | |
| Maximum Clock Frequency | 40MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Height | 2.03mm | |
| Length | 8.26mm | |
| Width | 5.33mm | |
| Maximum Operating Temperature | +85°C | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Automotive Standard | No | |
| Number of Words | 1048576 | |
| Minimum Supply Voltage | 1.80V | |
| Number of Bits per Word | 8 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 8MB | ||
Product Type FRAM | ||
Organisation 1M x 8 | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 0ns | ||
Maximum Clock Frequency 40MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Height 2.03mm | ||
Length 8.26mm | ||
Width 5.33mm | ||
Maximum Operating Temperature +85°C | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Automotive Standard No | ||
Number of Words 1048576 | ||
Minimum Supply Voltage 1.80V | ||
Number of Bits per Word 8 | ||
The Infineon FRAM Memory is a low power, 8 Mb non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non volatile memories.
RoHS compliant
Low voltage operation
Low power consumption
Fast serial peripheral interface
Dedicated 256 byte special sector FRAM