Infineon 256 kB Parallel FRAM 28-Pin SOIC
- RS Stock No.:
- 188-5394
- Mfr. Part No.:
- FM18W08-SG
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 27 units)*
MYR1,424.925
FREE delivery for orders over RM 500.00
Temporarily out of stock
- 81 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 27 - 27 | MYR52.775 | MYR1,424.93 |
| 54 - 81 | MYR51.614 | MYR1,393.58 |
| 108 + | MYR50.664 | MYR1,367.93 |
*price indicative
- RS Stock No.:
- 188-5394
- Mfr. Part No.:
- FM18W08-SG
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 256kB | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Maximum Clock Frequency | 1MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 28 | |
| Height | 2.37mm | |
| Length | 18.11mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Number of Words | 32k | |
| Maximum Supply Voltage | 5.5V | |
| Automotive Standard | AEC-Q100 | |
| Minimum Supply Voltage | 2.7V | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 256kB | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Maximum Clock Frequency 1MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 28 | ||
Height 2.37mm | ||
Length 18.11mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Number of Words 32k | ||
Maximum Supply Voltage 5.5V | ||
Automotive Standard AEC-Q100 | ||
Minimum Supply Voltage 2.7V | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
- Infineon 256 kB Parallel FRAM 28-Pin SOIC, FM18W08-SG
- Infineon 256 kB Parallel FRAM 28-Pin SOIC
- Infineon 256 kB Parallel FRAM 28-Pin SOIC, FM28V020-SG
- Infineon 256 kB Parallel FRAM 28-Pin SOIC, FM1808B-SG
- Infineon 256 kB FRAM 28-Pin SOIC-28
- Infineon 64 kB Parallel FRAM 28-Pin SOIC-28
- Infineon 64 kB Parallel FRAM 28-Pin SOIC-28, FM16W08-SG
- Infineon 256 kB FRAM 28-Pin SOIC-28, FM18W08-SGTR