Infineon 2 MB SPI FRAM 8-Pin DFN, FM25V20A-DG
- RS Stock No.:
- 124-2989
- Mfr. Part No.:
- FM25V20A-DG
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
MYR92.75
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Units | Per Unit |
|---|---|
| 1 - 18 | MYR92.75 |
| 19 - 36 | MYR91.84 |
| 37 + | MYR90.16 |
*price indicative
- RS Stock No.:
- 124-2989
- Mfr. Part No.:
- FM25V20A-DG
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | FRAM | |
| Memory Size | 2MB | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Maximum Clock Frequency | 40MHz | |
| Mount Type | Surface | |
| Package Type | DFN | |
| Pin Count | 8 | |
| Standards/Approvals | No | |
| Length | 4.5mm | |
| Height | 0.75mm | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2V | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Temperature | -40°C | |
| Number of Words | 256K | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 3.6V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type FRAM | ||
Memory Size 2MB | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Maximum Clock Frequency 40MHz | ||
Mount Type Surface | ||
Package Type DFN | ||
Pin Count 8 | ||
Standards/Approvals No | ||
Length 4.5mm | ||
Height 0.75mm | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2V | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Temperature -40°C | ||
Number of Words 256K | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 3.6V | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
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- Infineon 2 MB Serial-SPI FRAM 8-Pin SOIC-8