Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

RS Stock No.:: 188-2551
Mfr. Part No.:: W29N01HVBINF
Manufacturer:: Winbond

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

This image is representative of the product range

Bulk discount available

Subtotal (1 tray of 210 units)*

MYR2,605.47

FREE delivery for orders over RM 500.00

Temporarily out of stock

Shipping from 22 June 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Tray*
210 - 210	MYR12.407	MYR2,605.47
420 - 630	MYR12.134	MYR2,548.14
840 +	MYR11.911	MYR2,501.31

*price indicative

RS Stock No.:: 188-2551
Mfr. Part No.:: W29N01HVBINF
Manufacturer:: Winbond

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Winbond
	Product Type	Flash Memory
	Memory Size	1GB
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Organisation	128M x 8 Bit
	Mount Type	Surface
	Cell Type	SLC NAND
	Minimum Supply Voltage	2.7V
	Maximum Supply Voltage	3.6V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Standards/Approvals	No
	Length	11.1mm
	Height	0.6mm
	Width	11.1 mm
	Number of Words	128M
	Maximum Random Access Time	25μs
	Supply Current	35mA
	Number of Bits per Word	8
	Series	W29N01HV
	Automotive Standard	No

	Select all
	Brand Winbond
	Product Type Flash Memory
	Memory Size 1GB
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Organisation 128M x 8 Bit
	Mount Type Surface
	Cell Type SLC NAND
	Minimum Supply Voltage 2.7V
	Maximum Supply Voltage 3.6V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Standards/Approvals No
	Length 11.1mm
	Height 0.6mm
	Width 11.1 mm
	Number of Words 128M
	Maximum Random Access Time 25μs
	Supply Current 35mA
	Number of Bits per Word 8
	Series W29N01HV
	Automotive Standard No

Datasheet W29N01HVBINF

Density : 1Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 1G-bit/128M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Copy Back

Lowest power consumption

Read: 25mA(typ.3V),

Program/Erase: 25mA(typ.3V),

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

48-ball VFBGA

63-ball VFBGA

1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

FREE delivery for orders over RM 500.00

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