onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

RS Stock No.:: 121-6413
Mfr. Part No.:: MJD112G
Manufacturer:: onsemi

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

Bulk discount available

Price Each (In a Tube of 75)

MYR1.681

160 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Tube**
75 - 75	MYR1.681	MYR126.075
150 - 225	MYR1.645	MYR123.375
300 +	MYR1.614	MYR121.05

**price indicative

RS Stock No.:: 121-6413
Mfr. Part No.:: MJD112G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Length	6.73mm
Height	2.38mm
Dimensions	6.73 x 6.22 x 2.38mm
Minimum Operating Temperature	-65 °C
Maximum Power Dissipation	20 W
Width	6.22mm
Maximum Operating Temperature	+150 °C

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

FREE delivery for orders over MYR700.00

NPN Darlington Transistors, ON Semiconductor

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