onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

RS Stock No.:: 121-6413
Mfr. Part No.:: MJD112G
Manufacturer:: onsemi

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

Bulk discount available

Price Each (In a Tube of 75)

MYR2.461

235 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Tube**
75 - 75	MYR2.461	MYR184.575
150 - 225	MYR2.407	MYR180.525
300 +	MYR2.362	MYR177.15

**price indicative

RS Stock No.:: 121-6413
Mfr. Part No.:: MJD112G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Length	6.73mm
Maximum Operating Temperature	+150 °C
Dimensions	6.73 x 6.22 x 2.38mm
Maximum Power Dissipation	20 W
Minimum Operating Temperature	-65 °C
Width	6.22mm
Height	2.38mm

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

NPN Darlington Transistors, ON Semiconductor

Standards