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    onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

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    Subtotal (1 pack of 15 units)**

    MYR49.29

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    45 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

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    15 - 15MYR3.286MYR49.29
    30 - 30MYR3.248MYR48.72
    45 +MYR3.193MYR47.895

    **price indicative

    Packaging Options:
    RS Stock No.:
    790-5315
    Mfr. Part No.:
    MJD112-1G
    Manufacturer:
    onsemi
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    Brand

    onsemi

    Transistor Type

    NPN

    Maximum Continuous Collector Current

    2 A

    Maximum Collector Emitter Voltage

    100 V

    Maximum Emitter Base Voltage

    5 V

    Package Type

    IPAK (TO-251)

    Mounting Type

    Through Hole

    Pin Count

    3

    Transistor Configuration

    Single

    Number of Elements per Chip

    1

    Minimum DC Current Gain

    1000

    Maximum Base Emitter Saturation Voltage

    4 V

    Maximum Collector Base Voltage

    100 V

    Maximum Collector Emitter Saturation Voltage

    3 V

    Maximum Collector Cut-off Current

    20µA

    Minimum Operating Temperature

    -65 °C

    Maximum Power Dissipation

    20 W

    Dimensions

    6.73 x 2.38 x 6.35mm

    Maximum Operating Temperature

    +150 °C

    Height

    6.35mm

    Width

    2.38mm

    Length

    6.73mm

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