Name: Renesas Electronics SRAM Memory, R1LV0216BSB-7SI#B0- 2Mbit
Brand: Renesas Electronics
SKU: 772-6156P
Price: 31.36 MYR
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Renesas Electronics
	Memory Size	2Mbit
	Organisation	128K x 16
	Number of Words	128k
	Number of Bits per Word	16bit
	Maximum Random Access Time	70ns
	Address Bus Width	17bit
	Low Power	Yes
	Timing Type	Asynchronous
	Mounting Type	Surface Mount
	Package Type	TSOP
	Pin Count	44
	Dimensions	18.51 x 10.26 x 1mm
	Maximum Operating Supply Voltage	3.6 V
	Height	1mm
	Length	18.51mm
	Width	10.26mm
	Minimum Operating Supply Voltage	2.7 V dc
	Minimum Operating Temperature	-40 °C
	Maximum Operating Temperature	+85 °C

	Select all
	Brand Renesas Electronics
	Memory Size 2Mbit
	Organisation 128K x 16
	Number of Words 128k
	Number of Bits per Word 16bit
	Maximum Random Access Time 70ns
	Address Bus Width 17bit
	Low Power Yes
	Timing Type Asynchronous
	Mounting Type Surface Mount
	Package Type TSOP
	Pin Count 44
	Dimensions 18.51 x 10.26 x 1mm
	Maximum Operating Supply Voltage 3.6 V
	Height 1mm
	Length 18.51mm
	Width 10.26mm
	Minimum Operating Supply Voltage 2.7 V dc
	Minimum Operating Temperature -40 °C
	Maximum Operating Temperature +85 °C

Low Power SRAM.2M,x16,70ns,TSOP44 Data Sheet

COO (Country of Origin):: JP

Low Power SRAM, Renesas Electronics

The R1LV Series of advanced low voltage static RAMs is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives.

Single 2.7V to 3.6V power supply
Small stand-by current
No clocks, No refresh required
All inputs and outputs are TTL compatible
Three-state outputs: OR-tie Capability

SRAM (Static Random Access Memory)