BGAP2D30AE6327XTSA1 Infineon Pre-Driver for Wireless Infrastructure Applications 35.2 dB, 16-Pin 4200 MHz TSNP-16

View all RF Amplifiers ICs
Bulk discount available

Subtotal (1 unit)*

MYR37.12

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 9MYR37.12
10 - 99MYR33.43
100 - 499MYR30.78
500 - 999MYR28.58
1000 +MYR25.61

*price indicative

RS Stock No.:
349-417
Mfr. Part No.:
BGAP2D30AE6327XTSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

Pre-Driver for Wireless Infrastructure Applications

Operating Frequency

4200 MHz

Technology

BiCMOS

Gain

35.2dB

Minimum Supply Voltage

4.75V

Package Type

TSNP-16

Maximum Supply Voltage

5.5V

Pin Count

16

Noise Figure

4.5dB

Minimum Operating Temperature

-40°C

Third Order Intercept OIP3

34.5dBm

Maximum Operating Temperature

115°C

Standards/Approvals

RoHS, JEDEC47/20/22

Height

8mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon 3.3 to 4.2 GHz mid band driver amplifier that can be used as pre driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications.

BiCMOS technology for an optimized performance

High gain and high power for fewer components in line up

Internal matching and saving external matching components

Easy design in and small area footprint

Related links

Recently viewed