Dual N-Channel MOSFET, 6 A, 24 V, 4-Pin X1-WLB1818 Diodes Inc DMN2023UCB4-7

RS Stock No.:: 921-1066P
Mfr. Part No.:: DMN2023UCB4-7
Manufacturer:: DiodesZetex

Dual N-Channel MOSFET, 6 A, 24 V, 4-Pin X1-WLB1818 Diodes Inc DMN2023UCB4-7

This image is representative of the product range

Temporarily out of stock - back order for despatch 18/08/2025, delivery within 4 working days from despatch date

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

MYR2.311

Units	Per Unit
760 - 1480	MYR2.311
1500 +	MYR2.195

RS Stock No.:: 921-1066P
Mfr. Part No.:: DMN2023UCB4-7
Manufacturer:: DiodesZetex

Datasheet
DMN2023UCB4, N-Channel Enhancement Mode Field MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6 A
Maximum Drain Source Voltage	24 V
Package Type	X1-WLB1818
Mounting Type	Surface Mount
Pin Count	4
Maximum Drain Source Resistance	40 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.3V
Minimum Gate Threshold Voltage	0.5V
Maximum Power Dissipation	1.45 W
Transistor Configuration	Common Drain
Maximum Gate Source Voltage	-12 V, +12 V
Transistor Material	Si
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	29 nC @ 4.5 V
Width	1.8mm
Length	1.8mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1V
Height	0.24mm

Dual N-Channel MOSFET, 6 A, 24 V, 4-Pin X1-WLB1818 Diodes Inc DMN2023UCB4-7

Dual N-Channel MOSFET, Diodes Inc.