Dual N-Channel MOSFET, 10 A, 20 V, 6-Pin WDFN Diodes Inc DMN2013UFX-7

RS Stock No.:: 921-1050P
Mfr. Part No.:: DMN2013UFX-7
Manufacturer:: DiodesZetex

Dual N-Channel MOSFET, 10 A, 20 V, 6-Pin WDFN Diodes Inc DMN2013UFX-7

This image is representative of the product range

Temporarily out of stock - back order for despatch 20/08/2025, delivery within 4 working days from despatch date

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

MYR2.897

Units	Per Unit
760 - 1480	MYR2.897
1500 +	MYR2.752

RS Stock No.:: 921-1050P
Mfr. Part No.:: DMN2013UFX-7
Manufacturer:: DiodesZetex

DMN2013UFX, Dual N-Channel Enhancement Mode MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	10 A
Maximum Drain Source Voltage	20 V
Package Type	WDFN
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	14 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.1V
Minimum Gate Threshold Voltage	0.5V
Maximum Power Dissipation	2.14 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	2.1mm
Number of Elements per Chip	2
Width	5.1mm
Typical Gate Charge @ Vgs	57.4 nC @ 8 V
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	0.8mm

Dual N-Channel MOSFET, 10 A, 20 V, 6-Pin WDFN Diodes Inc DMN2013UFX-7

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