N-Channel MOSFET, 5.6 A, 40 V, 3-Pin SOT-23 Vishay SI2318CDS-T1-GE3
- RS Stock No.:
- 919-4205
- Mfr. Part No.:
- SI2318CDS-T1-GE3
- Manufacturer:
- Vishay
87000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (On a Reel of 3000)
MYR1.116
| Units | Per Unit | Per Reel* |
| 3000 + | MYR1.116 | MYR3,348.00 |
| *price indicative | ||
- RS Stock No.:
- 919-4205
- Mfr. Part No.:
- SI2318CDS-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5.6 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 51 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 2.1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 1.4mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 3.04mm |
| Typical Gate Charge @ Vgs | 5.8 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Height | 1.02mm |
| Minimum Operating Temperature | -55 °C |