Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

RS Stock No.:: 919-4189
Mfr. Part No.:: SI9945BDY-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

Subtotal (1 reel of 2500 units)**

MYR4,985.00

Stock check temporarily unavailable - call for stock availability

FREE delivery for orders over MYR700.00

Units	Per Unit	Per Reel**
2500 +	MYR1.994	MYR4,985.00

**price indicative

RS Stock No.:: 919-4189
Mfr. Part No.:: SI9945BDY-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	4mm
Typical Gate Charge @ Vgs	13 nC @ 10 V
Maximum Operating Temperature	+150 °C
Length	5mm
Number of Elements per Chip	2
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

FREE delivery for orders over MYR700.00

Dual N-Channel MOSFET, Vishay Semiconductor

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