P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3
- RS Stock No.:
- 919-0288
- Mfr. Part No.:
- SI4435DDY-T1-GE3
- Manufacturer:
- Vishay
Temporarily out of stock - back order for despatch 16/09/2024, delivery within 4 working days from despatch date
Added
Price Each (On a Reel of 2500)
MYR2.945
| Units | Per Unit | Per Reel* |
| 2500 + | MYR2.945 | MYR7,362.50 |
| *price indicative | ||
- RS Stock No.:
- 919-0288
- Mfr. Part No.:
- SI4435DDY-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 8.1 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 24 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V, 32 nC @ 10 V |
| Width | 4mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 1.5mm |