CAS300M17BM2 Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Wolfspeed

  • RS Stock No. 916-3876
  • Mfr. Part No. CAS300M17BM2
  • Manufacturer Wolfspeed
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements

MOSFET Transistors, Wolfspeed

Attribute Value
Channel Type N
Maximum Continuous Drain Current 325 A
Maximum Drain Source Voltage 1700 V
Package Type Half Bridge
Mounting Type Panel Mount
Pin Count 7
Maximum Drain Source Resistance 20 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.3V
Minimum Gate Threshold Voltage 1.8V
Maximum Power Dissipation 1.76 kW
Transistor Configuration Series
Maximum Gate Source Voltage -10 V, +25 V
Number of Elements per Chip 2
Minimum Operating Temperature -40 °C
Width 61.4mm
Height 30mm
Transistor Material SiC
Typical Gate Charge @ Vgs 1076 nC @ 20 V, 1076 nC @ 5 V
Forward Diode Voltage 2.5V
Maximum Operating Temperature +150 °C
Length 106.4mm
Temporarily out of stock - back order for despatch 27/01/2021, delivery within 4 working days from despatch date
Price Each
MYR 5,186.71
Per unit
1 - 1
2 - 3
4 +