Wolfspeed SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 C3M0120090D
- RS Stock No.:
- 915-8849P
- Mfr. Part No.:
- C3M0120090D
- Manufacturer:
- Wolfspeed
Bulk discount available
Subtotal 8 units (supplied in a tube)**
MYR452.40
11 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR500.00
Real time qty checker
Units | Per Unit |
---|---|
8 - 14 | MYR56.55 |
15 + | MYR54.87 |
**price indicative
- RS Stock No.:
- 915-8849P
- Mfr. Part No.:
- C3M0120090D
- Manufacturer:
- Wolfspeed
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Wolfspeed | |
Channel Type | N | |
Maximum Continuous Drain Current | 23 A | |
Maximum Drain Source Voltage | 900 V | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 155 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 1.8V | |
Maximum Power Dissipation | 97 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -8 V, +18 V | |
Typical Gate Charge @ Vgs | 17.3 nC @ 15 V | |
Maximum Operating Temperature | +150 °C | |
Length | 16.13mm | |
Transistor Material | SiC | |
Width | 21.1mm | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 4.8V | |
Height | 5.21mm | |
Select all | ||
---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 23 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 155 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 1.8V | ||
Maximum Power Dissipation 97 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +18 V | ||
Typical Gate Charge @ Vgs 17.3 nC @ 15 V | ||
Maximum Operating Temperature +150 °C | ||
Length 16.13mm | ||
Transistor Material SiC | ||
Width 21.1mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 4.8V | ||
Height 5.21mm | ||