SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D
- RS Stock No.:
- 915-8842P
- Mfr. Part No.:
- C3M0280090D
- Manufacturer:
- Wolfspeed
670 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (Supplied in a Tube)
MYR25.755
| Units | Per Unit |
| 8 - 14 | MYR25.755 |
| 16 + | MYR24.985 |
- RS Stock No.:
- 915-8842P
- Mfr. Part No.:
- C3M0280090D
- Manufacturer:
- Wolfspeed
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 11.5 A |
| Maximum Drain Source Voltage | 900 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 360 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 54 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +18 V |
| Length | 16.13mm |
| Typical Gate Charge @ Vgs | 9.5 nC @ 15 V |
| Transistor Material | SiC |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 21.1mm |
| Forward Diode Voltage | 4.8V |
| Height | 5.21mm |
| Minimum Operating Temperature | -55 °C |