- RS Stock No.:
- 914-0191P
- Mfr. Part No.:
- SPP15P10PHXKSA1
- Manufacturer:
- Infineon
Available for back order.
Added
Price Each (Supplied in a Tube)
MYR8.074
Units | Per Unit |
100 - 490 | MYR8.074 |
500 - 990 | MYR7.496 |
1000 - 2490 | MYR7.005 |
2500 + | MYR6.617 |
- RS Stock No.:
- 914-0191P
- Mfr. Part No.:
- SPP15P10PHXKSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 15 A |
Maximum Drain Source Voltage | 100 V |
Package Type | TO-220 |
Series | SIPMOS |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 240 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 128 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 4.57mm |
Length | 10.36mm |
Typical Gate Charge @ Vgs | 37 nC @ 10 V |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |
Height | 15.95mm |
Forward Diode Voltage | 1.35V |