P-Channel MOSFET, 70 A, 40 V, 3-Pin DPAK Infineon IPD70P04P4L08ATMA1
- RS Stock No.:
- 857-4613
- Mfr. Part No.:
- IPD70P04P4L08ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 2500 units)**
MYR8,377.50
999999 In Local stock for delivery in 2-3 working days, delivery time may vary for certain locations or FTZ*
999999 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
|---|---|---|
| 2500 - 2500 | MYR3.351 | MYR8,377.50 |
| 5000 - 5000 | MYR3.25 | MYR8,125.00 |
| 7500 + | MYR3.153 | MYR7,882.50 |
**price indicative
- RS Stock No.:
- 857-4613
- Mfr. Part No.:
- IPD70P04P4L08ATMA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 70 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | OptiMOS™ -T2 | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 40 V | ||
Series OptiMOS™ -T2 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
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