Dual N/P-Channel-Channel MOSFET, 2 A, 4.5 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6601LVT-7

RS Stock No.:: 823-2915P
Mfr. Part No.:: DMG6601LVT-7
Manufacturer:: DiodesZetex

Dual N/P-Channel-Channel MOSFET, 2 A, 4.5 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6601LVT-7

This image is representative of the product range

22150 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

MYR1.105

Units	Per Unit
750 - 1450	MYR1.105
1500 +	MYR0.935

RS Stock No.:: 823-2915P
Mfr. Part No.:: DMG6601LVT-7
Manufacturer:: DiodesZetex

Complementary Pair Enhancement Mode Mosfet Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2 A, 4.5 A
Maximum Drain Source Voltage	30 V
Package Type	TSOT-26
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	85 mΩ, 190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.3 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Typical Gate Charge @ Vgs	12.3 nC @ 10 V, 13.8 nC @ 10 V
Length	2.9mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Width	1.6mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.9mm

Dual N/P-Channel-Channel MOSFET, 2 A, 4.5 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6601LVT-7

Dual N/P-Channel MOSFET, Diodes Inc.