Quad N/P-Channel-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM Diodes Inc ZXMHC3A01T8TA
- RS Stock No.:
- 823-1877P
- Mfr. Part No.:
- ZXMHC3A01T8TA
- Manufacturer:
- DiodesZetex
925 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
MYR7.516
Units | Per Unit |
|---|---|
| 250 - 495 | MYR7.516 |
| 500 + | MYR7.142 |
- RS Stock No.:
- 823-1877P
- Mfr. Part No.:
- ZXMHC3A01T8TA
- Manufacturer:
- DiodesZetex
Technical data sheets
Legislation and Compliance
Product Details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Diodes Inc.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 1.8 A, 3.1 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SM |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 180 mΩ, 330 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 1.7 W |
| Transistor Configuration | Full Bridge |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Number of Elements per Chip | 4 |
| Width | 3.7mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 3.9 nC @ 10 V, 5.2 nC @ 10 V |
| Length | 6.7mm |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |