Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN65D8LDW-7

RS Stock No.:: 822-2602P
Mfr. Part No.:: DMN65D8LDW-7
Manufacturer:: DiodesZetex

Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN65D8LDW-7

This image is representative of the product range

83100 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

MYR0.703

Units	Per Unit
800 - 1400	MYR0.703
1500 +	MYR0.682

RS Stock No.:: 822-2602P
Mfr. Part No.:: DMN65D8LDW-7
Manufacturer:: DiodesZetex

DMN65D8LDW-7 Dual N-Channel Enhancement Mode MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	200 mA
Maximum Drain Source Voltage	60 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	8 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	20V
Maximum Power Dissipation	400 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.35mm
Number of Elements per Chip	2
Length	2.2mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	0.87 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1mm

Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN65D8LDW-7

Dual N-Channel MOSFET, Diodes Inc.