Essential and Operational Technologies

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Units	Per Unit
8 - 14	MYR129.78
15 +	MYR125.86

Select all	Attribute	Value
	Brand	Wolfspeed
	Channel Type	N
	Maximum Continuous Drain Current	31 A
	Maximum Drain Source Voltage	1200 V
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	208 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.2V
	Minimum Gate Threshold Voltage	1.7V
	Maximum Power Dissipation	208 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-10 V, +25 V
	Width	5.21mm
	Length	16.13mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	49.2 nC @ 20 V
	Transistor Material	SiC
	Maximum Operating Temperature	+150 °C
	Height	21.1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Wolfspeed
	Channel Type N
	Maximum Continuous Drain Current 31 A
	Maximum Drain Source Voltage 1200 V
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 208 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.2V
	Minimum Gate Threshold Voltage 1.7V
	Maximum Power Dissipation 208 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -10 V, +25 V
	Width 5.21mm
	Length 16.13mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 49.2 nC @ 20 V
	Transistor Material SiC
	Maximum Operating Temperature +150 °C
	Height 21.1mm
	Minimum Operating Temperature -55 °C

Wolfspeed SiC N-Channel MOSFET, 31 A, 1200 V, 3-Pin TO-247 C2M0080120D

FREE delivery for orders over MYR500.00

Wolfspeed Silicon Carbide Power MOSFETs