N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 onsemi FDP030N06

RS Stock No.:: 806-3541
Mfr. Part No.:: FDP030N06
Manufacturer:: onsemi

N-Channel MOSFET, 120 A, 193 A, 60 V, 3-Pin TO-220 onsemi FDP030N06

This image is representative of the product range

826 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Added

Price Each (In a Pack of 2)

MYR22.43

Units	Per Unit	Per Pack*
2 +	MYR22.43	MYR44.86
*price indicative

RS Stock No.:: 806-3541
Mfr. Part No.:: FDP030N06
Manufacturer:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A, 193 A
Maximum Drain Source Voltage	60 V
Package Type	TO-220
Series	PowerTrench
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3.2 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	231 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	10.1mm
Maximum Operating Temperature	+175 °C
Width	4.7mm
Transistor Material	Si
Typical Gate Charge @ Vgs	116 nC @ 10 V
Height	15.38mm
Minimum Operating Temperature	-55 °C