Renesas P-Channel MOSFET, 1.6 A, 20 V, 3-Pin SOT-416 2SJ648-T1-A

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Subtotal 80 units (supplied on a continuous strip)*

MYR48.72

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Per Unit
80 - 160MYR0.609
200 - 360MYR0.562
400 - 760MYR0.54
800 +MYR0.527

*price indicative

Packaging Options:
RS Stock No.:
772-5270P
Mfr. Part No.:
2SJ648-T1-A
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-416 (SC-75)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.98 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Width

0.8mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.6mm

Height

0.75mm

P-Channel MOSFET, Renesas Electronics (NEC)



MOSFET Transistors, Renesas Electronics (NEC)