N-Channel MOSFET, 64 A, 250 V, 3-Pin TO-220 Infineon IPP200N25N3GXKSA1
- RS Stock No.:
- 754-5500
- Mfr. Part No.:
- IPP200N25N3GXKSA1
- Manufacturer:
- Infineon
2 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR39.82
| Units | Per Unit |
| 1 - 12 | MYR39.82 |
| 13 - 24 | MYR38.98 |
| 25 + | MYR37.80 |
- RS Stock No.:
- 754-5500
- Mfr. Part No.:
- IPP200N25N3GXKSA1
- Manufacturer:
- Infineon
Legislation and Compliance
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 64 A |
| Maximum Drain Source Voltage | 250 V |
| Package Type | TO-220 |
| Series | OptiMOS 3 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 64 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Width | 15.95mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 10.36mm |
| Height | 4.57mm |
| Minimum Operating Temperature | -55 °C |