Quad N/P-Channel-Channel MOSFET, 1.4 A, 1.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMHC6A07N8TC

RS Stock No.:: 751-5348P
Mfr. Part No.:: ZXMHC6A07N8TC
Manufacturer:: DiodesZetex

Quad N/P-Channel-Channel MOSFET, 1.4 A, 1.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMHC6A07N8TC

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7415 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

MYR4.766

Units	Per Unit
625 - 1245	MYR4.766
1250 +	MYR4.528

RS Stock No.:: 751-5348P
Mfr. Part No.:: ZXMHC6A07N8TC
Manufacturer:: DiodesZetex

60V SO8 Complementary Enhancement Mode MOSFET H-Bridge
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.4 A, 1.8 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	350 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.36 W
Transistor Configuration	Full Bridge
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	3.2 nC @ 10 V, 5.1 nC @ 10 V
Transistor Material	Si
Number of Elements per Chip	4
Length	5mm
Height	1.5mm
Minimum Operating Temperature	-55 °C

Quad N/P-Channel-Channel MOSFET, 1.4 A, 1.8 A, 60 V, 8-Pin SOIC Diodes Inc ZXMHC6A07N8TC

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.