N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220AB Vishay IRF830APBF
- RS Stock No.:
- 542-9434
- Mfr. Part No.:
- IRF830APBF
- Manufacturer:
- Vishay
14 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
597 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR6.66
| Units | Per Unit |
| 1 - 12 | MYR6.66 |
| 13 - 24 | MYR6.24 |
| 25 + | MYR6.06 |
- RS Stock No.:
- 542-9434
- Mfr. Part No.:
- IRF830APBF
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, 500V, Vishay Semiconductor
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 5 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.4 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 74 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 10.41mm |
| Width | 4.7mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 9.01mm |