Infineon IPP050N10NF2S Type N-Channel MOSFET, 19.4 A, 100 V, 3-Pin TO-220 IPP050N10NF2SAKMA1
- RS Stock No.:
- 228-6549
- Mfr. Part No.:
- IPP050N10NF2SAKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR44.60
FREE delivery for orders over RM 500.00
In Stock
- 905 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | MYR8.92 | MYR44.60 |
| 10 - 95 | MYR8.178 | MYR40.89 |
| 100 - 245 | MYR7.552 | MYR37.76 |
| 250 - 495 | MYR7.006 | MYR35.03 |
| 500 + | MYR6.812 | MYR34.06 |
*price indicative
- RS Stock No.:
- 228-6549
- Mfr. Part No.:
- IPP050N10NF2SAKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19.4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | IPP050N10NF2S | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Height | 9.45mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19.4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series IPP050N10NF2S | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Height 9.45mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon IPP050N10NF2S is the N channel power MOSFET. The drain source voltage of this mosfet is the 100 V. It supports a wide variety of applications and standard pinout allows for drop-in replacement. This mosfet have increased current carrying capability.
Optimized for a wide range of applications
N-channel, normal level
100% avalanche tested
Related links
- Infineon IPP050N10NF2S Type N-Channel MOSFET 100 V, 3-Pin TO-220
- Infineon IPA Type N-Channel MOSFET 650 V N TO-220
- Infineon IPA Type N-Channel MOSFET 60 V N TO-220
- Infineon CoolMOS Type N-Channel MOSFET 500 V N, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 600 V N, 3-Pin TO-220
- Infineon IRFS7440 Type N-Channel MOSFET 40 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-220
