- RS Stock No.:
- 216-9683
- Mfr. Part No.:
- TSM110NB04DCR
- Manufacturer:
- Taiwan Semiconductor
5000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 25)
MYR9.662
Units | Per Unit | Per Pack* |
25 - 600 | MYR9.662 | MYR241.55 |
625 - 1225 | MYR9.472 | MYR236.80 |
1250 + | MYR8.695 | MYR217.375 |
*price indicative |
- RS Stock No.:
- 216-9683
- Mfr. Part No.:
- TSM110NB04DCR
- Manufacturer:
- Taiwan Semiconductor
Technical data sheets
Legislation and Compliance
Product Details
The Taiwan semiconductor single N channel power MOSFET transistors, stands for Metal Oxide Semiconductor Field-Effect Transistors. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Drain Current | 48 A |
Maximum Drain Source Voltage | 40 V |
Package Type | PDFN56 |
Series | TSM025 |
Pin Count | 8 |
Maximum Drain Source Resistance | 11 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Transistor Material | Silicon |