SiC N-Channel MOSFET, 30 A, 1200 V, 3-Pin TO-247 Wolfspeed C3M0075120D
- RS Stock No.:
- 192-3523
- Mfr. Part No.:
- C3M0075120D
- Manufacturer:
- Wolfspeed
12 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
134 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR84.67
| Units | Per Unit |
| 1 - 7 | MYR84.67 |
| 8 - 14 | MYR82.90 |
| 15 + | MYR80.42 |
- RS Stock No.:
- 192-3523
- Mfr. Part No.:
- C3M0075120D
- Manufacturer:
- Wolfspeed
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications. Download our LTspice models to get started or click here to request more information.
Minimum of 1200V Vbr across entire operating temperature range
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 75 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 1.7V |
| Maximum Power Dissipation | 113.6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, 19 V |
| Typical Gate Charge @ Vgs | 54 nC @ 4/15V |
| Length | 16.13mm |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |
| Width | 5.21mm |
| Maximum Operating Temperature | +150 °C |
| Height | 21.1mm |
| Minimum Operating Temperature | -55 °C |