MOSFET 1.2kV 75mOHMS G3 SiC MOSFET

  • RS Stock No. 192-3376
  • Mfr. Part No. C3M0075120D
  • Manufacturer Wolfspeed
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications. Download our LTspice models to get started or click here to request more information.

Minimum of 1200V Vbr across entire operating temperature range
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 30 A
Maximum Drain Source Voltage 1200 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 75 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 1.7V
Maximum Power Dissipation 113.6 W
Transistor Configuration Single
Maximum Gate Source Voltage -8 V, 19 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 5.21mm
Maximum Operating Temperature +150 °C
Height 21.1mm
Typical Gate Charge @ Vgs 54 nC @ 4/15V
Length 16.13mm
Transistor Material SiC
Temporarily out of stock - back order for despatch 08/01/2020, delivery within 4 working days from despatch date
Price Each (In a Tube of 30)
MYR 79.303
units
Per unit
Per Tube*
30 - 30
MYR79.303
MYR2,379.09
60 - 120
MYR73.64
MYR2,209.20
150 +
MYR68.73
MYR2,061.90
*price indicative