onsemi Type N-Channel MOSFET, 44 A, 1200 V Enhancement, 3-Pin TO-247 NVHL080N120SC1
- RS Stock No.:
- 189-0419
- Mfr. Part No.:
- NVHL080N120SC1
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
MYR54.35
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Units | Per Unit |
|---|---|
| 1 - 7 | MYR54.35 |
| 8 - 14 | MYR53.57 |
| 15 + | MYR50.94 |
*price indicative
- RS Stock No.:
- 189-0419
- Mfr. Part No.:
- NVHL080N120SC1
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 162mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 348W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 4V | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.82mm | |
| Width | 4.82 mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 162mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 348W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 4V | ||
Maximum Operating Temperature 175°C | ||
Height 20.82mm | ||
Width 4.82 mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
1200V rated
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Devices are Pb-Free
Applications
PFC
OBC
End Products
Automotive DC/DC converter for EV/PHEV
Automotive On Board Charger
Automotive Auxiliary Motor Drive
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