Essential and Operational Technologies

These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account.

We use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.

Advertising

These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.

Recommendations

These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.

Functionality

These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.

Analytics

These cookies help us improve our website by collecting and reporting information on how you use it.

Units	Per Unit
1 - 7	MYR54.35
8 - 14	MYR53.57
15 +	MYR50.94

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	44 A
	Maximum Drain Source Voltage	1200 V
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	162 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4.3V
	Minimum Gate Threshold Voltage	1.8V
	Maximum Power Dissipation	348 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-15 V, +25 V
	Length	15.87mm
	Transistor Material	SiC
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Width	4.82mm
	Typical Gate Charge @ Vgs	56 nC @ 20 V
	Forward Diode Voltage	4V
	Automotive Standard	AEC-Q101
	Height	20.82mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 44 A
	Maximum Drain Source Voltage 1200 V
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 162 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4.3V
	Minimum Gate Threshold Voltage 1.8V
	Maximum Power Dissipation 348 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -15 V, +25 V
	Length 15.87mm
	Transistor Material SiC
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Width 4.82mm
	Typical Gate Charge @ Vgs 56 nC @ 20 V
	Forward Diode Voltage 4V
	Automotive Standard AEC-Q101
	Height 20.82mm
	Minimum Operating Temperature -55 °C

onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1

FREE delivery for orders over MYR500.00

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

Related links