N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC Vishay Siliconix SiDR392DP-T1-GE3
- RS Stock No.:
- 178-3934
- Mfr. Part No.:
- SiDR392DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
3000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 5)
MYR12.83
| Units | Per Unit | Per Pack* |
| 5 - 745 | MYR12.83 | MYR64.15 |
| 750 - 1495 | MYR12.188 | MYR60.94 |
| 1500 + | MYR11.578 | MYR57.89 |
| *price indicative | ||
- RS Stock No.:
- 178-3934
- Mfr. Part No.:
- SiDR392DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
- COO (Country of Origin):
- TW
Product Details
TrenchFET® Gen IV power MOSFET
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
Top side cooling feature provides additional venue for thermal transfer
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK SO-8DC |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 900 μΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +20 V, +6 V |
| Typical Gate Charge @ Vgs | 125 nC @ 10 V |
| Length | 5.99mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 5mm |
| Forward Diode Voltage | 1.1V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.07mm |