TrenchFET® Gen IV power MOSFET
Excellent RDS - Qg Figure-of-Merit (FOM) for switch-mode power supplies
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 30 V |
Package Type | SO-8 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 1 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 2.2V |
Maximum Power Dissipation | 65.7 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -12 V, +16 V |
Number of Elements per Chip | 1 |
Height | 1.07mm |
Typical Gate Charge @ Vgs | 61.5 nC @ 10 V |
Transistor Material | Si |
Forward Diode Voltage | 1.1V |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Width | 5mm |
Length | 5.99mm |
Series | TrenchFET |