SiRA62DP-T1-RE3 N-Channel MOSFET, 80 A, 30 V TrenchFET, 8-Pin SO-8 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

TrenchFET® Gen IV power MOSFET
Excellent RDS - Qg Figure-of-Merit (FOM) for switch-mode power supplies

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 80 A
Maximum Drain Source Voltage 30 V
Package Type SO-8
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 1 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 2.2V
Maximum Power Dissipation 65.7 W
Transistor Configuration Single
Maximum Gate Source Voltage -12 V, +16 V
Number of Elements per Chip 1
Height 1.07mm
Typical Gate Charge @ Vgs 61.5 nC @ 10 V
Transistor Material Si
Forward Diode Voltage 1.1V
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Width 5mm
Length 5.99mm
Series TrenchFET
6000 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 10)
MYR 5.50
units
Per unit
Per Pack*
10 - 90
MYR5.50
MYR55.00
100 - 490
MYR4.22
MYR42.20
500 - 990
MYR3.58
MYR35.80
1000 +
MYR2.82
MYR28.20
*price indicative
Packaging Options:
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