SIHA2N80E-GE3 N-Channel MOSFET, 2.8 A, 800 V E-Series, 3-Pin TO-220 Vishay Siliconix
- RS Stock No. 178-3673
- Mfr. Part No. SIHA2N80E-GE3
- Manufacturer Vishay Siliconix
Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details
FEATURES
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Specifications
| Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.8 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.75 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 29 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 4.7mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 9.8 nC @ 10 V |
| Height | 15.3mm |
| Series | E-Series |
| Maximum Operating Temperature | +150 °C |
| Length | 10.3mm |
| Forward Diode Voltage | 1.2V |
950 In Global stock for delivery within 4 - 6 working days
Price Each (In a Tube of 50)
MYR
5.60
units
Per unit
Per Tube*
50 - 50
MYR5.60
MYR280.00
100 - 200
MYR5.007
MYR250.35
250 - 450
MYR4.612
MYR230.60
500 - 950
MYR4.348
MYR217.40
1000 +
MYR3.707
MYR185.35
*price indicative
