SIHA2N80E-GE3 N-Channel MOSFET, 2.8 A, 800 V E-Series, 3-Pin TO-220 Vishay Siliconix

Technical data sheets
Legislation and Compliance
RoHS Status: Not Applicable
COO (Country of Origin): CN
Product Details

FEATURES
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 2.8 A
Maximum Drain Source Voltage 800 V
Package Type TO-220
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 2.75 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 29 W
Transistor Configuration Single
Maximum Gate Source Voltage ±30 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 4.7mm
Height 15.3mm
Forward Diode Voltage 1.2V
Length 10.3mm
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 9.8 nC @ 10 V
Series E-Series
Transistor Material Si
950 In Global stock for delivery within 4 - 6 working days
Price Each (In a Tube of 50)
MYR 5.44
units
Per unit
Per Tube*
50 - 50
MYR5.44
MYR272.00
100 - 200
MYR4.864
MYR243.20
250 - 450
MYR4.48
MYR224.00
500 - 950
MYR4.224
MYR211.20
1000 +
MYR3.584
MYR179.20
*price indicative
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