N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220AB Vishay IRF840APBF
- RS Stock No.:
- 178-0835
- Mfr. Part No.:
- IRF840APBF
- Manufacturer:
- Vishay
100 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Tube of 50)
MYR7.581
| Units | Per Unit | Per Tube* |
| 50 + | MYR7.581 | MYR379.05 |
| *price indicative | ||
- RS Stock No.:
- 178-0835
- Mfr. Part No.:
- IRF840APBF
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, 500V, Vishay Semiconductor
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 8 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 850 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 10.41mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Width | 4.7mm |
| Height | 9.01mm |
| Minimum Operating Temperature | -55 °C |