- RS Stock No.:
- 178-0827
- Mfr. Part No.:
- IRF9630PBF
- Manufacturer:
- Vishay
450 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Tube of 50)
MYR6.831
Units | Per Unit | Per Tube* |
50 + | MYR6.831 | MYR341.55 |
*price indicative |
- RS Stock No.:
- 178-0827
- Mfr. Part No.:
- IRF9630PBF
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements
Ease of paralleling
Simple drive requirements
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 6.5 A |
Maximum Drain Source Voltage | 200 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 800 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 74 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Length | 10.41mm |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 29 nC @ 10 V |
Width | 4.7mm |
Height | 9.01mm |
Minimum Operating Temperature | -55 °C |