VN0300L-G N-Channel MOSFET, 640 mA, 30 (Minimum) V VN0300, 3-Pin TO-92 Microchip Technology

  • RS Stock No. 177-9705
  • Mfr. Part No. VN0300L-G
  • Manufacturer Microchip
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TW
Product Details

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 30V. It has drain-source resistance of 1.2ohms at a gate-source voltage of 10V. It has continuous drain current of 640mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this MOSFET is 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling
• Excellent thermal stability
• Free from secondary breakdown
• High input impedance and high gain
• Integral source drain diode
• Low CISS and fast switching speeds
• Low power drive requirement
• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers
• Converters
• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
• Motor controls
• Power supply circuits
• Switches

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 640 mA
Maximum Drain Source Voltage 30 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 3.3 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 1 W
Transistor Configuration Single
Maximum Gate Source Voltage 30 V
Number of Elements per Chip 1
Width 4.06mm
Maximum Operating Temperature +150 °C
Length 5.08mm
Height 5.33mm
Minimum Operating Temperature -55 °C
Forward Diode Voltage 0.9V
Series VN0300
Temporarily out of stock - back order for despatch 14/02/2020, delivery within 4 working days from despatch date
Price Each (In a Bag of 1000)
MYR 2.30
units
Per unit
Per Bag*
1000 +
MYR2.30
MYR2,300.00
*price indicative
Related Products
Enhancement Mode Field Effect Transistors (FET) are produced ...
Description:
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
PowerTrench® MOSFETs are optimised power switches that offer ...
Description:
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC ...
High-Efficiency DC-DC ConvertersSwitching Voltage RegulatorsHigh-speed switchingSmall gate charge: ...
Description:
High-Efficiency DC-DC ConvertersSwitching Voltage RegulatorsHigh-speed switchingSmall gate charge: QSW = 30 nC (typ.)Small output charge: Qoss = 81.3 nC (typ.)Low drain-source on-resistance: RDS(ON) = 0.41 mΩ (typ.) (VGS = 10 V)Low leakage current: IDSS = 10 μA (max) (VDS = ...
ApplicationsAutomotiveMotor DriversSwitching Voltage RegulatorsFeaturesLow drain-source on-resistance: RDS(ON) = ...
Description:
ApplicationsAutomotiveMotor DriversSwitching Voltage RegulatorsFeaturesLow drain-source on-resistance: RDS(ON) = 3.3 mΩ (typLow leakage current: IDSS = 10 μA (max) (VDS = 40 V)Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA).