N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG

RS Stock No.:: 171-3697
Mfr. Part No.:: TSM2308CX RFG
Manufacturer:: Taiwan Semiconductor

N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2308CX RFG

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

Added

Price Each (In a Pack of 50)

MYR3.394

Units	Per Unit	Per Pack*
50 - 700	MYR3.394	MYR169.70
750 - 1450	MYR3.326	MYR166.30
1500 +	MYR3.26	MYR163.00
*price indicative

RS Stock No.:: 171-3697
Mfr. Part No.:: TSM2308CX RFG
Manufacturer:: Taiwan Semiconductor

Technical data sheets

Legislation and Compliance

Product Details

The Taiwan Semiconductor 60V, 3A, 3 pin, N-channel MOSFET has single transistor configuration and enhancement channel mode. It is generally used DC-DC power system
and load switch applications.

Advance trench process technology
High density cell design for ultra low on-resistance
Operating temperature ranges between -55 °C to +150 °C
1.25W max. power dissipation
Gate threshold voltage ranges between 1.2V-2.5V

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3 A
Maximum Drain Source Voltage	60 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	192 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	3.99 nC @ 4.5 V
Width	1.4mm
Length	3mm
Height	1.05mm
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C