N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON Infineon BSC030N08NS5ATMA1
- RS Stock No.:
- 171-1978
- Mfr. Part No.:
- BSC030N08NS5ATMA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 05/05/2025, delivery within 4 working days from despatch date
Added
Price Each (In a Pack of 10)
MYR9.804
| Units | Per Unit | Per Pack* |
| 10 - 1240 | MYR9.804 | MYR98.04 |
| 1250 - 2490 | MYR9.46 | MYR94.60 |
| 2500 + | MYR8.986 | MYR89.86 |
| *price indicative | ||
- RS Stock No.:
- 171-1978
- Mfr. Part No.:
- BSC030N08NS5ATMA1
- Manufacturer:
- Infineon
Legislation and Compliance
Product Details
The Infineon BSC030N08NS5 is optiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44 %
Ideal for high switching frequency
Output capacitance reduction of up to 44 %
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 80 V |
| Series | BSC030N08NS5 |
| Package Type | TDSON |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 139 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Width | 6.35mm |
| Number of Elements per Chip | 1 |
| Length | 5.49mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.1V |
| Height | 1.1mm |