SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K
- RS Stock No.:
- 168-4886
- Mfr. Part No.:
- C3M0065100K
- Manufacturer:
- Wolfspeed
Price Each (In a Tube of 30)
MYR115.72
1770 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 + | MYR115.72 | MYR3,471.60 |
*price indicative
- RS Stock No.:
- 168-4886
- Mfr. Part No.:
- C3M0065100K
- Manufacturer:
- Wolfspeed
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Cree Inc.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage | 1000 V |
| Package Type | TO-247-4 |
| Series | C3M |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 90 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 1.8V |
| Maximum Power Dissipation | 113.5 W |
| Maximum Gate Source Voltage | -8 V, +19 V |
| Typical Gate Charge @ Vgs | 35 nC @ 15 V, 35 nC @ 4 V |
| Width | 5.21mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | SiC |
| Length | 16.13mm |
| Height | 23.6mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 4.8V |