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    N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220F onsemi FQPF5N50CYDTU

    RS Stock No.:
    166-3621
    Mfr. Part No.:
    FQPF5N50CYDTU
    Manufacturer:
    onsemi
    onsemi

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    750 In Global stock for delivery within 4 - 6 working days
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    Price Each (In a Tube of 50)

    MYR5.346

    unitsPer UnitPer Tube*
    50 - 50MYR5.346MYR267.30
    100 - 150MYR5.264MYR263.20
    200 +MYR5.161MYR258.05
    *price indicative
    RS Stock No.:
    166-3621
    Mfr. Part No.:
    FQPF5N50CYDTU
    Manufacturer:
    onsemi

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    Product Details

    QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor


    Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
    They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

    For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.


    MOSFET Transistors, ON Semi


    ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
    ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current5 A
    Maximum Drain Source Voltage500 V
    Package TypeTO-220F
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance1.4 Ω
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage4V
    Minimum Gate Threshold Voltage2V
    Maximum Power Dissipation38 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-30 V, +30 V
    Typical Gate Charge @ Vgs18 nC @ 10 V
    Transistor MaterialSi
    Maximum Operating Temperature+150 °C
    Number of Elements per Chip1
    Width4.7mm
    Length10.16mm
    Height15.87mm
    SeriesQFET
    Minimum Operating Temperature-55 °C
    750 In Global stock for delivery within 4 - 6 working days
    Add to Basket
    units

    Added

    Price Each (In a Tube of 50)

    MYR5.346

    unitsPer UnitPer Tube*
    50 - 50MYR5.346MYR267.30
    100 - 150MYR5.264MYR263.20
    200 +MYR5.161MYR258.05
    *price indicative