N-Channel MOSFET, 22 A, 100 V, 8-Pin Power 33 onsemi FDMC86102LZ
- RS Stock No.:
- 166-2901
- Mfr. Part No.:
- FDMC86102LZ
- Manufacturer:
- onsemi
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (On a Reel of 3000)
MYR5.833
| Units | Per Unit | Per Reel* |
| 3000 - 3000 | MYR5.833 | MYR17,499.00 |
| 6000 - 9000 | MYR5.705 | MYR17,115.00 |
| 12000 + | MYR5.60 | MYR16,800.00 |
| *price indicative | ||
- RS Stock No.:
- 166-2901
- Mfr. Part No.:
- FDMC86102LZ
- Manufacturer:
- onsemi
Legislation and Compliance
Product Details
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | Power 33 |
| Series | PowerTrench |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 40 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 41 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 3.3mm |
| Maximum Operating Temperature | +150 °C |
| Length | 3.3mm |
| Typical Gate Charge @ Vgs | 15.3 nC @ 10 V, 7.6 nC @ 4.5 V |
| Transistor Material | Si |
| Height | 0.75mm |
| Minimum Operating Temperature | -55 °C |