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    N-Channel MOSFET, 7 A, 500 V, 3-Pin TO-220F onsemi FDPF8N50NZF

    RS Stock No.:
    145-4548
    Mfr. Part No.:
    FDPF8N50NZF
    Manufacturer:
    onsemi
    onsemi

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    View all MOSFETs
    Discontinued product
    RS Stock No.:
    145-4548
    Mfr. Part No.:
    FDPF8N50NZF
    Manufacturer:
    onsemi
    COO (Country of Origin):
    CN

    Legislation and Compliance

    COO (Country of Origin):
    CN

    Product Details

    UniFET™ N-Channel MOSFET, Fairchild Semiconductor


    UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
    UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

    For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.


    MOSFET Transistors, ON Semi


    ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
    ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

    Specifications

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current7 A
    Maximum Drain Source Voltage500 V
    Package TypeTO-220F
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance1 Ω
    Channel ModeEnhancement
    Minimum Gate Threshold Voltage3V
    Maximum Power Dissipation40 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-25 V, +25 V
    Number of Elements per Chip1
    Width4.7mm
    Maximum Operating Temperature+150 °C
    Length10.16mm
    Typical Gate Charge @ Vgs14 nC @ 10 V
    Transistor MaterialSi
    Minimum Operating Temperature-55 °C
    SeriesUniFET
    Height15.87mm
    Discontinued product