N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Nexperia NX7002AK,215
- RS Stock No.:
- 136-2122
- Mfr. Part No.:
- NX7002AK,215
- Manufacturer:
- Nexperia
Available for back order.
Added
Price Each (On a Reel of 3000)
MYR0.086
| Units | Per Unit | Per Reel* |
| 3000 - 3000 | MYR0.086 | MYR258.00 |
| 6000 - 6000 | MYR0.076 | MYR228.00 |
| 9000 + | MYR0.068 | MYR204.00 |
| *price indicative | ||
- RS Stock No.:
- 136-2122
- Mfr. Part No.:
- NX7002AK,215
- Manufacturer:
- Nexperia
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA)
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Very fast switching
Trench MOSFET technology
ESD protected
Trench MOSFET technology
ESD protected
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9.2 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.1V |
| Minimum Gate Threshold Voltage | 1.1V |
| Maximum Power Dissipation | 1.33 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 1.4mm |
| Length | 3mm |
| Typical Gate Charge @ Vgs | 0.33 nC @ 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |
| Forward Diode Voltage | 1.2V |