IRF60B217 N-Channel MOSFET, 60 A, 60 V StrongIRFET, 3-Pin TO-220AB Infineon

  • RS Stock No. 123-6144
  • Mfr. Part No. IRF60B217
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 60 A
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 9 mΩ
Maximum Gate Threshold Voltage 3.7V
Minimum Gate Threshold Voltage 2.1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 83 W
Number of Elements per Chip 1
Width 4.83mm
Typical Turn-On Delay Time 8.3 ns
Typical Gate Charge @ Vgs 44 nC @ 10 V
Height 16.51mm
Series StrongIRFET
Typical Input Capacitance @ Vds 2230 pF @ 25 V
Transistor Material Si
Maximum Operating Temperature +175 °C
Typical Turn-Off Delay Time 24 ns
Forward Transconductance 150S
Forward Diode Voltage 1.2V
Length 10.67mm
Dimensions 10.67 x 4.83 x 16.51mm
Minimum Operating Temperature -55 °C
110 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 10)
MYR 5.264
units
Per unit
Per Pack*
10 - 40
MYR5.264
MYR52.64
50 - 240
MYR4.687
MYR46.87
250 - 490
MYR3.831
MYR38.31
500 - 1240
MYR3.51
MYR35.10
1250 +
MYR3.017
MYR30.17
*price indicative
Packaging Options:
Related Products
OptiMOS™ products are available in high performance packages ...
Description:
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next ...
Infineon offers a large and comprehensive portfolio of ...
Description:
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit ...
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die ...
Description:
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that ...
The Infineon SIPMOS® small Signal P- channel MOSFETs ...
Description:
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety ...