IRF60B217 N-Channel MOSFET, 60 A, 60 V StrongIRFET, 3-Pin TO-220AB Infineon

  • RS Stock No. 123-6144
  • Mfr. Part No. IRF60B217
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 60 A
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 9 mΩ
Maximum Gate Threshold Voltage 3.7V
Minimum Gate Threshold Voltage 2.1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-220AB
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Maximum Power Dissipation 83 W
Forward Diode Voltage 1.2V
Transistor Material Si
Length 10.67mm
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Width 4.83mm
Typical Gate Charge @ Vgs 44 nC @ 10 V
Height 16.51mm
Series StrongIRFET
Maximum Operating Temperature +175 °C
90 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 10)
MYR 5.264
units
Per unit
Per Pack*
10 - 40
MYR5.264
MYR52.64
50 - 240
MYR4.687
MYR46.87
250 - 490
MYR3.831
MYR38.31
500 - 1240
MYR3.51
MYR35.10
1250 +
MYR3.017
MYR30.17
*price indicative
Packaging Options:
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