N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXYS IXFP7N80P
- RS Stock No.:
- 194-136
- Mfr. Part No.:
- IXFP7N80P
- Manufacturer:
- IXYS
50 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 5)
MYR24.624
| Units | Per Unit | Per Pack* |
| 5 - 10 | MYR24.624 | MYR123.12 |
| 15 - 20 | MYR21.144 | MYR105.72 |
| 25 + | MYR17.972 | MYR89.86 |
| *price indicative | ||
- RS Stock No.:
- 194-136
- Mfr. Part No.:
- IXFP7N80P
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 7 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-220 |
| Series | HiperFET, Polar |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.44 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 200 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 10.66mm |
| Width | 4.83mm |
| Transistor Material | Si |
| Height | 9.15mm |
| Minimum Operating Temperature | -55 °C |